์ ๋ฝ ์ฐํฉ RoHS ๋ช
๋ น์ด | Compliant |
๋ฏธ๊ตญ์์ถํต์ ๋ถ๋ฅECCN ์ธ์ฝ๋ฉ | EAR99 |
์นํ๊ฒฝ ๋ฌด์ฐ | Active |
๋ฏธ๊ตญ ์ธ๊ด ์ํ ์ฝ๋ | 8541.29.00.95 |
Automotive | No |
PPAP | No |
Material | Si |
Configuration | Dual Common Source |
Number of Elements per Chip | 2 |
Process Technology | DMOS |
Maximum Drain Source Voltage (V) | 70 |
Maximum Gate Source Voltage (V) | ยฑ20 |
Maximum Gate Threshold Voltage (V) | 7 |
Maximum VSWR | 20(Min) |
Maximum Continuous Drain Current (A) | 35 |
Maximum Gate Source Leakage Current (nA) | 7000 |
Maximum IDSS (uA) | 7000 |
Typical Input Capacitance @ Vds (pF) | 380(Max)@28V |
Typical Reverse Transfer Capacitance @ Vds (pF) | 10(Max)@28V |
Typical Output Capacitance @ Vds (pF) | 180(Max)@28V |
Typical Forward Transconductance (S) | 5.6(Min) |
Maximum Power Dissipation (mW) | 438000 |
Typical Power Gain (dB) | 16(Min) |
Maximum Frequency (MHz) | 108 |
Typical Drain Efficiency (%) | 65(Min) |
Minimum Operating Temperature (ยฐC) | -65 |
Maximum Operating Temperature (ยฐC) | 200 |
Mounting | Screw |
Package Height | 5.08 |
Package Width | 10.16 |
Package Length | 34.03 |
PCB changed | 5 |
Supplier Package | Case DR |
Pin Count | 5 |