Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 11.1(Max) mm |
Package Width | 3(Max) mm |
Package Length | 7.8(Max) mm |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-225 |
3 | |
Lead Shape | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP MJE170G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 12500 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 7 V.