Infineon Technologies AGMMBTA06LT1HTSA1GP BJT

Trans GP BJT NPN 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTA06LT1HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

49,885 부품 : 오늘 배송

    Total$0.09Price for 1

    • Service Fee  $7.00

      오늘 배송

      Ships from:
      미국
      Date Code:
      2209+
      Manufacturer Lead Time:
      4 주
      Minimum Of :
      1
      Maximum Of:
      2999
      Country Of origin:
      중국
         
      • Price: $0.0864
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 오늘 배송

      Ships from:
      미국
      Date Code:
      2209+
      Manufacturer Lead Time:
      4 주
      Country Of origin:
      중국
      • In Stock: 22,885 부품
      • Price: $0.0864
    • (3000)

      오늘 배송

      Increment:
      3000
      Ships from:
      미국
      Date Code:
      2314+
      Manufacturer Lead Time:
      4 주
      Country Of origin:
      중국
      • In Stock: 27,000 부품
      • Price: $0.0374