Infineon Technologies AGMMBTA06LT1HTSA1GP BJT

Trans GP BJT NPN 80V 0.5A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBTA06LT1HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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