onsemiMUN5214DW1T1GDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.9 mm |
| Package Width | 1.25 mm |
| Package Length | 2 mm |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Thanks to ON Semiconductor's NPN MUN5214DW1T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |