onsemiMUN5214DW1T1G数字双极型晶体管

Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R

Thanks to ON Semiconductor's NPN MUN5214DW1T1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a dual configuration.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2116+
      Manufacturer Lead Time:
      9 星期
      Country Of origin:
      中国
      • In Stock: 21,505
      • Price: $0.1232
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      可以今天配送

      Increment:
      3000
      Ships from:
      美国
      Date Code:
      2417+
      Manufacturer Lead Time:
      9 星期
      Country Of origin:
      中国
      • In Stock: 288,000
      • Price: $0.0356