ToshibaRN1427TE85LFDigital BJT - Pre-Biased
Trans Digital BJT NPN 50V 0.8mA 200mW 3-Pin S-Mini T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 50 | |
| 800 | |
| 90@100mA@1V | |
| 300 | |
| 2.2 | |
| 0.25@1mA@50mA|0.25@2mA@50mA | |
| 0.22 | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1 |
| Package Width | 1.5 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | S-MINI |
| Supplier Package | S-Mini |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to Toshiba, easily integrate NPN RN1427TE85LF digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |