| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Type | NPN |
| Configuration | Single |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Continuous DC Collector Current (mA) | 800 |
| Minimum DC Current Gain | 90@100mA@1V |
| Typical Current Gain Bandwidth (MHz) | 300 |
| Typical Input Resistor (kOhm) | 2.2 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@1mA@50mA|0.25@2mA@50mA |
| Typical Resistor Ratio | 0.22 |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Mounting | Surface Mount |
| Package Height | 1.1 |
| Package Width | 1.5 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | S-MINI |
| Supplier Package | S-Mini |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
Thanks to Toshiba, easily integrate NPN RN1427TE85LF digital transistors into digital signal processing circuits. This product's maximum continuous DC collector current is 800 mA, while its minimum DC current gain is 90@100mA@1 V. It has a maximum collector emitter saturation voltage of 0.25@2mA@50mA|0.25@1mA@50mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
