STMicroelectronicsSD57030-01RF FETs
Trans RF MOSFET N-CH 65V 4A 3-Pin Case M-250 Loose
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| LDMOS | |
| 65 | |
| 20 | |
| 10(Min) | |
| 4 | |
| 58@28V | |
| 2.7@28V | |
| 34@28V | |
| 1.8 | |
| 74000 | |
| 30(Min) | |
| 15 | |
| 1000 | |
| 60 | |
| -65 | |
| 200 | |
| Loose | |
| Industrial | |
| Mounting | Surface Mount |
| Package Height | 3.94(Max) |
| Package Width | 6.09(Max) |
| Package Length | 9.91(Max) |
| PCB changed | 3 |
| Supplier Package | Case M-250 |
| 3 |
Amplifying and switching electronic signals in radio frequency environments is easy with this SD57030-01 RF amplifier from STMicroelectronics. Its maximum power dissipation is 74000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |