Share this search
Filters
Selecting a category will provide you with more filters and product details.
부품 번호 | Price | 주식 | Manufacturer | Category | Description | Maximum Power Dissipation - (W) | Configuration | Maximum Operating Temperature - (°C) | Number of Elements per Chip | Typical Collector Emitter Saturation Voltage - (V) | Maximum Continuous Collector Current Range - (A) | Minimum Operating Temperature - (°C) | Maximum Continuous Collector Current - (A) | ROHS | Pin Count | Supplier Package | Tradename | Life Cycle | Maximum Gate Emitter Leakage Current - (uA) | Maximum Collector-Emitter Voltage - (V) | Technology | Typical Output Capacitance - (pF) | Channel Type | Maximum Transition Frequency - (MHz) | Packaging | Typical Input Capacitance - (pF) | Maximum Gate Emitter Voltage - (V) | Package Family Name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
데이터시트 3 제품들: 보기
|
데이터시트 보기 |
다양한
|
Toshiba | IGBT Chip | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | 다양한 | ||||||||||||||
S6X06B(ANSD)
TOSHIBA SILICON N-CHANNEL IEGT
|
|
Toshiba | IGBT Chip | TOSHIBA SILICON N-CHANNEL IEGT | ||||||||||||||||||||||||
S6X06(B,ANSD,Q) Trans IGBT Chip N-CH 4500V 5000W |
|
Toshiba | IGBT Chip | Trans IGBT Chip N-CH 4500V 5000W | 5000 | Single Dual Emitter | 4 | Yes | Unconfirmed | 0.05 | 4500 | N | ±20 | |||||||||||||||
S6X06
Trans IGBT Chip N-CH 4500V 5000W
|
|
Toshiba | IGBT Chip | Trans IGBT Chip N-CH 4500V 5000W |