STMicroelectronicsST13003NGP BJT
Trans GP BJT NPN 400V 1A 20000mW 3-Pin(3+Tab) SOT-32 Bag
| EAR99 | |
| Obsolete | |
| EA | |
| SVHC | Yes |
| SVHC 기준 초과 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 9 | |
| 1.2@125mA@0.5A|1.3@330mA@1A | |
| 0.7@125mA@0.5A|1.2@330mA@1A | |
| 1 | |
| 5@1A@10V|6@0.5A@2V | |
| 20000 | |
| -55 | |
| 150 | |
| Bag | |
| Mounting | Through Hole |
| Package Height | 10.8(Max) |
| Package Width | 2.7(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | SOT-32 |
| 3 | |
| Lead Shape | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ST13003N GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
| EDA / CAD Models |