| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Dual Common Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage (V) | 70 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 15 |
| Typical Input Capacitance @ Vds (pF) | 180(Max)@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 7.5(Max)@28V |
| Typical Output Capacitance @ Vds (pF) | 90(Max)@28V |
| Typical Forward Transconductance (S) | 2.4(Min) |
| Maximum Power Dissipation (mW) | 250000 |
| Typical Power Gain (dB) | 10(Min) |
| Maximum Frequency (MHz) | 500 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 50(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Mounting | Screw |
| Package Height | 6.35 |
| Package Width | 10.77 |
| Package Length | 22.86 |
| PCB changed | 8 |
| Supplier Package | Case DD |
| Pin Count | 8 |
