| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| 美国海关商品代码 | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Single Quad Source |
| Number of Elements per Chip | 1 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage (V) | 125 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 7 |
| Maximum VSWR | 20(Min) |
| Maximum Continuous Drain Current (A) | 21 |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 7000 |
| Typical Input Capacitance @ Vds (pF) | 420(Max)@50V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 10.5(Max)@50V |
| Typical Output Capacitance @ Vds (pF) | 175(Max)@50V |
| Typical Forward Transconductance (S) | 5.6(Min) |
| Maximum Power Dissipation (mW) | 220000 |
| Typical Power Gain (dB) | 13(Min) |
| Maximum Frequency (MHz) | 200 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 40(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Mounting | Screw |
| Package Height | 6.35 |
| Package Width | 10.77 |
| Package Length | 22.86 |
| PCB changed | 6 |
| Supplier Package | Case DV |
| Pin Count | 6 |
