Diodes IncorporatedFCX495TA通用双极型晶体管
Trans GP BJT NPN 150V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 170 | |
| 150 | |
| 7 | |
| 1@50mA@500mA | |
| 0.2@25mA@250mA|0.3@50mA@500mA | |
| 1 | |
| 100 | |
| 100@1mA@10V|100@250mA@10V|10@1A@10V|50@500mA@10V | |
| 1000 | |
| 100(Min) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.5 |
| Package Width | 2.5 |
| Package Length | 4.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| 4 | |
| Lead Shape | Flat |
Jump-start your electronic circuit design with this versatile NPN FCX495TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |