Photointerrupter Reflective Phototransistor 4-Pin SMT
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | No |
| PPAP | No |
| Type | Reflective |
| Number of Channels per Chip | 1 |
| Peak Wavelength (nm) | 930 |
| Maximum Rise Time (ns) | 100000 |
| Maximum Fall Time (ns) | 100000 |
| Output Device | Phototransistor |
| Maximum Forward Current (mA) | 50 |
| Maximum Collector Current (mA) | 20 |
| Maximum Collector-Emitter Voltage (V) | 35 |
| Maximum Reverse Voltage (V) | 6 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| Mounting | Surface Mount |
| Package Height | 1.1 mm |
| Package Width | 1.7 mm |
| Package Length | 3.2 mm |
| PCB changed | 4 |
| Standard Package Name | SMD |
| Supplier Package | SMT |
| Pin Count | 4 |
| EDA / CAD Models |
|
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Photointerrupter Reflective Phototransistor 4-Pin SMT
| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | Active |
| Automotive | No |
| PPAP | No |
| Type | Reflective |
| Number of Channels per Chip | 1 |
| Peak Wavelength (nm) | 930 |
| Maximum Rise Time (ns) | 100000 |
| Maximum Fall Time (ns) | 100000 |
| Output Device | Phototransistor |
| Maximum Forward Current (mA) | 50 |
| Maximum Collector Current (mA) | 20 |
| Maximum Collector-Emitter Voltage (V) | 35 |
| Maximum Reverse Voltage (V) | 6 |
| Maximum Power Dissipation (mW) | 100 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| Mounting | Surface Mount |
| Package Height | 1.1 mm |
| Package Width | 1.7 mm |
| Package Length | 3.2 mm |
| PCB changed | 4 |
| Standard Package Name | SMD |
| Supplier Package | SMT |
| Pin Count | 4 |
| EDA / CAD Models |
制造商
