Infineon Technologies AGIKW50N60TFKSA1IGBT 芯片
Trans IGBT Chip N-CH 600V 80A 333W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Through Hole |
| Package Height | 20.9 |
| Package Width | 5.03 |
| Package Length | 15.9 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 3 | |
| Lead Shape | Through Hole |
This powerful and secure IKW50N60TFKSA1 IGBT transistor from Infineon Technologies will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 333000 mW. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |