Infineon Technologies AGIKZ50N65EH5XKSA1IGBT 芯片
Trans IGBT Chip N-CH 650V 85A 273W 4-Pin(4+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 21 |
| Package Width | 5 |
| Package Length | 15.8 |
| PCB changed | 4 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| 4 | |
| Lead Shape | Through Hole |
This IKZ50N65EH5XKSA1 IGBT transistor from Infineon Technologies will work perfectly in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 273000 mW. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 175 °C. This device utilizes trench stop 5 technology.
| EDA / CAD Models |