| 欧盟RoHS指令 | Compliant |
| 美国出口管制分类ECCN编码 | EAR99 |
| 环保无铅 | LTB |
| 美国海关商品代码 | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.5 |
| Package Length | 3 |
| PCB changed | 6 |
| Standard Package Name | SO |
| Supplier Package | TSOP |
| Pin Count | 6 |
| Lead Shape | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP MBT35200MT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 35 V and a maximum emitter base voltage of 5 V.
