onsemiMMBT2907AWT1G通用双极型晶体管

Trans GP BJT PNP 60V 0.6A 150mW 3-Pin SC-70 T/R

Jump-start your electronic circuit design with this versatile PNP MMBT2907AWT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

库存总量: 165,000 个零件

Regional Inventory: 144,000

    Total$62.10Price for 3000

    144,000 In stock: 可以今天配送

    • (3000)

      可以今天配送

      Ships from:
      美国
      Date Code:
      2412+
      Manufacturer Lead Time:
      10 星期
      Country Of origin:
      中国
      • In Stock: 144,000
      • Price: $0.0207
    • (3000)

      可以在 2 天内配送

      Ships from:
      荷兰
      Date Code:
      2452+
      Manufacturer Lead Time:
      10 星期
      Country Of origin:
      中国
      • In Stock: 21,000
      • Price: $0.0229