onsemiMUN5213DW1T1G数字双极型晶体管

Trans Digital BJT NPN 50V 0.1A 385mW 6-Pin SC-88 T/R

In contrast to traditional transistors, ON Semiconductor's NPN MUN5213DW1T1G digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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库存总量: 71,892 个零件

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
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      Manufacturer Lead Time:
      9 星期
      Country Of origin:
      中国
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