onsemiNST3946DP6T5G通用双极型晶体管

Trans GP BJT NPN/PNP 40V 0.2A 420mW 6-Pin SOT-963 T/R

This specially engineered npn and PNP NST3946DP6T5G GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 420 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

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7,580 个零件: 可以今天配送

    Total$0.10Price for 1

    • Service Fee  $7.00

      可以今天配送

      Ships from:
      美国
      Date Code:
      2303+
      Manufacturer Lead Time:
      17 星期
      Minimum Of :
      1
      Maximum Of:
      7580
      Country Of origin:
      中国
         
      • Price: $0.1020
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 可以今天配送

      Ships from:
      美国
      Date Code:
      2303+
      Manufacturer Lead Time:
      17 星期
      Country Of origin:
      中国
      • In Stock: 7,580
      • Price: $0.1020