Silicon LabsSI8233AB-D-IMIGBT 和 MOSFET 栅极驱动光耦合器
2.5 kV 5 V UVLO HS/LS Isolated Gate Driver
| Compliant | |
| EAR99 | |
| Active | |
| 8542330001 | |
| Tube |
Switch between states in a high power transistor by using this SI8233AB-D-IM power driver developed by Silicon Laboratories. This device has a maximum propagation delay time of 30(typ) ns and a maximum power dissipation of 1200 mW. Its maximum power dissipation is 1200 mW. This gate driver has an operating temperature range of -40 °C to 125 °C. This device has a minimum operating supply voltage of 6.5 V and a maximum of 24 V.
| EDA / CAD Models |