STMicroelectronicsST13003DN通用双极型晶体管
Trans GP BJT NPN 400V 1A 20000mW 3-Pin(3+Tab) SOT-32 Bag
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 400 | |
| 9 | |
| 1.2@125mA@0.5A|1.3@330mA@1A | |
| 0.7@125mA@0.5A|1.2@330mA@1A | |
| 1 | |
| 5@1A@10V|6@0.5A@2V | |
| 20000 | |
| -55 | |
| 150 | |
| Bag | |
| Mounting | Through Hole |
| Package Height | 10.8(Max) |
| Package Width | 2.7(Max) |
| Package Length | 7.8(Max) |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | SOT-32 |
| 3 | |
| Lead Shape | Through Hole |
The three terminals of this NPN ST13003DN GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |