Maxim Integrated Bipolar Transistors
2 Maxim Integrated Bipolar Transistors
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| Part No. | Price | Stock | Manufacturer | Category | Type | Configuration | Number of Elements per Chip | Maximum Collector Base Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Emitter Base Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Minimum DC Current Gain | Minimum DC Current Gain Range | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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MAX2601ESA+
Trans RF BJT NPN 17V 1.2A 6400mW 8-Pin SOIC EP Tube
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Maxim Integrated | RF BJT | NPN | Single Dual Base Dual Collector Quad Emitter | 1 | 15 | 17 | 2.3 | 1.2 | 6V/250mA | 100@250mA@3V | 50 to 120 | 6400@Ta=70C | 1 | 11.6 | 1000 | 3.3(Typ) | 8 | SOIC EP | SO | No | Unknown | No | No | No | No | EAR99 | No | No | ||
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MAX2601ESA+T
Trans RF BJT NPN 17V 1.2A 8-Pin SOIC EP T/R
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Maxim Integrated | RF BJT | NPN | Single Dual Base Dual Collector Quad Emitter | 1 | 15 | 17 | 2.3 | 1.2 | 6V/250mA | 100@250mA@3V | 50 to 120 | 6400@Ta=70C | 1 | 11.6 | 1000 | 3.3(Typ) | Tape and Reel | 8 | SOIC EP | SO | No | Unknown | No | No | No | No | EAR99 | No | No |