Toshiba Memory
| Part No. | Price | Stock | Manufacturer | Category | Type | Density - (bit) | Cell Type | Density in Bits - (bit) | Architecture | Programmability | Number of Bits per Word - (bit) | Boot Block | Block Organization | Timing Type | Minimum Operating Supply Voltage - (V) | Address Width - (bit) | Number of Words | Maximum Access Time - (ns) | Interface Type | Process Technology | Maximum Operating Current - (mA) | Maximum Operating Supply Voltage - (V) | ECC Support | ECCN Code |
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TH58NVG3S0HTA00
NAND Flash Parallel 3.3V 8G-bit 1G x 8 48-Pin TSOP-I
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Toshiba | Flash | EAR99 | ||||||||||||||||||||
| TC58NVG0S3EBAI4 SLC NAND Flash Parallel 3.3V 1G-bit 128M x 8 25ns 63-Pin TFBGA |
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Toshiba | Flash | 1G | SLC NAND | 1073741824 | Sectored | Yes | 8 | Symmetrical | Asynchronous | 128M | 25 | Parallel | 3A991.b.1.a | |||||||||
THGBMDG5D1LBAIT
NAND Flash Serial e-MMC 3V/3.3V 32G-bit 153-Pin WFBGA
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Toshiba | Flash | 3A991b.1.a. | ||||||||||||||||||||
| TC58NVG1S3HBAI4 NAND Flash Parallel 3.3V 2G-bit 256M x 8 63-Pin FBGA |
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Toshiba | Flash | 2G | NAND | 2147483648 | Yes | 8 | No | Symmetrical | Asynchronous | 29 | 256M | Parallel | CMOS | Yes | EAR99 | |||||||
| TC58BVG1S3HBAI6 NAND Flash Parallel 3.3V 2G-bit 256M x 8 67-Pin VFBGA |
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Toshiba | Flash | 3A991b.1.a. | ||||||||||||||||||||
| THNSW008GAA-C Flash Card 8G-byte 3.3V SDHC Card 9-Pin Tray |
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Toshiba | Flash Cards | SDHC Card | 8G | 68719476736 | Yes | SD | EAR99 | |||||||||||||||
| TC58NYG1S3EBAI5 SLC NAND Flash Parallel 1.8V 2G-bit 256M x 8 63-Pin TFBGA |
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Toshiba | Flash | 2G | SLC NAND | 2147483648 | Sectored | Yes | 8 | No | Symmetrical | Asynchronous | 1 | 256M | Parallel | Yes | 3A991b.1.a. | |||||||
| THGBMHG9C4LBAIR NAND Flash Serial e-MMC 512G-bit |
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Toshiba | Flash | 3A991b.1.a. | ||||||||||||||||||||
THGBMFG6C1LBAIL
NAND Flash Serial e-MMC 3.3V 64G-bit 64G/16G/8G x 1/4-bit/8-bit
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Toshiba | Flash | 3A991b.1.a. |