onsemiMMBT2907ALT3GGP BJT

Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R

Implement this PNP MMBT2907ALT3G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part if shipping to the United States

50,000 parts: Ships today

    Total$202.00Price for 10000

    • (10000)

      Ships today

      Ships from:
      United States of America
      Date Code:
      2431+
      Manufacturer Lead Time:
      12 weeks
      Country Of origin:
      China
      • In Stock: 50,000 parts
      • Price: $0.0202