onsemiMMBT2907ALT3G通用双极型晶体管

Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R

Implement this PNP MMBT2907ALT3G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part if shipping to the United States

50,000 个零件: 可以今天配送

    Total$202.00Price for 10000

    • (10000)

      可以今天配送

      Ships from:
      美国
      Date Code:
      2431+
      Manufacturer Lead Time:
      12 星期
      Country Of origin:
      中国
      • In Stock: 50,000
      • Price: $0.0202