onsemiMMBT2907ALT3GGP BJT

Trans GP BJT PNP 60V 0.6A 350mW 3-Pin SOT-23 T/R

Implement this PNP MMBT2907ALT3G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.

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50,000 piezas: Se puede enviar hoy

    Total$202.00Price for 10000

    • (10000)

      Se puede enviar hoy

      Ships from:
      Estados Unidos de América
      Date Code:
      2431+
      Manufacturer Lead Time:
      12 semanas
      Country Of origin:
      China
      • In Stock: 50,000 piezas
      • Price: $0.0202