STMicroelectronicsBD677ADarlington BJT
Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) SOT-32 Tube
Compliant with Exemption | |
EAR99 | |
Active | |
8541.10.00.80 | |
SVHC | Yes |
Taux de SVHC dépassant le seuil autorisé | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
60 | |
60 | |
5 | |
4 | |
200 | |
2.8@40mA@2A | |
750@2A@3V | |
40000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Installation | Through Hole |
Hauteur du paquet | 10.8(Max) |
Largeur du paquet | 2.7(Max) |
Longueur du paquet | 7.8(Max) |
Carte électronique changée | 3 |
Onglet | Tab |
Nom de lemballage standard | TO |
Conditionnement du fournisseur | SOT-32 |
3 | |
Forme de sonde | Through Hole |
Compared to other transistors, the NPN BD677A Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@2A@3 V. It has a maximum collector emitter saturation voltage of 2.8@40mA@2A V. This Darlington transistor array's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
EDA / CAD Models |