| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) mm |
| Largeur du paquet | 4.6(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Compared to other transistors, the NPN BU931T Darlington transistor from STMicroelectronics can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2.2@70mA@7A|2.4@100mA@8A V. This product's maximum continuous DC collector current is 15 A, while its minimum DC current gain is 300@5A@10 V. It has a maximum collector emitter saturation voltage of 1.6@70mA@7A|1.8@100mA@8A V. Its maximum power dissipation is 125000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 175 °C.
| EDA / CAD Models |