Infineon Technologies AGIKW75N60H3FKSA1Puce IGBT
Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 20.95 |
| Largeur du paquet | 5.03 |
| Longueur du paquet | 15.9 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 3 | |
| Forme de sonde | Through Hole |
Don't be afraid to step up the amps in your device when using this IKW75N60H3FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 428000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.
| EDA / CAD Models |