Infineon Technologies AGIKW75N60H3FKSA1IGBT Chip

Trans IGBT Chip N-CH 600V 80A 428W 3-Pin(3+Tab) TO-247 Tube

Don't be afraid to step up the amps in your device when using this IKW75N60H3FKSA1 IGBT transistor from Infineon Technologies. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 428000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 175 °C.

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