STMicroelectronicsULN2069BDarlington BJT
Trans Darlington NPN 80V 1.75A 4300mW 16-Pin Power PDIP Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Installation | Through Hole |
| Hauteur du paquet | 5.1(Max) - 0.51(Min) mm |
| Largeur du paquet | 7.1(Max) mm |
| Longueur du paquet | 20(Max) mm |
| Carte électronique changée | 16 |
| Nom de lemballage standard | DIP |
| Conditionnement du fournisseur | Power PDIP |
| 16 | |
| Forme de sonde | Through Hole |
Look no further than STMicroelectronics' NPN ULN2069B Darlington transistor, which can amplify the signal to provide higher current gains. This product's maximum continuous DC collector current is 1.75 A. It has a maximum collector emitter saturation voltage of 1.1@625uA@500mA|1.2@935uA@750mA|1.3@1.25mA@1A|1.4@2mA@1.25A|1.5@2.25mA@1.5A V. Its maximum power dissipation is 4300 mW. This Darlington transistor array has a minimum operating temperature of -20 °C and a maximum of 85 °C. It has a maximum collector emitter voltage of 80 V.
| EDA / CAD Models |