| 欧州RoHS | Compliant |
| ECCN (US) | 3A991d. |
| Part Status | Active |
| HTS | 8542.31.00.60 |
| Family Name | MAX 10 |
| User I/Os | 101 |
| Process Technology | 55nm |
| Shift Registers | Utilize Memory |
| Operating Supply Voltage (V) | 1.2 |
| Logic Elements | 40000 |
| Number of Multipliers | 125 (18x18) |
| Program Memory Type | SRAM |
| Embedded Memory (Kbit) | 1260 |
| Device Logic Units | 40000 |
| Number of Global Clocks | 20 |
| Device Number of DLLs/PLLs | 4 |
| Programmability | Yes |
| Reprogrammability Support | Yes |
| Copy Protection | No |
| In-System Programmability | Yes |
| Speed Grade | 7 |
| Differential I/O Standards | HSUL|LVDS|SSTL |
| External Memory Interface | DDR2 SDRAM|DDR3 SDRAM|DDR3L SDRAM|LPDDR2 SDRAM |
| Minimum Operating Supply Voltage (V) | 1.15 |
| Maximum Operating Supply Voltage (V) | 1.25 |
| I/O Voltage (V) | 1.2|1.35|1.5|1.8|2.5|3|3.3 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Supplier Temperature Grade | Industrial |
| Packaging | Tray |
