STMicroelectronics2STA1694GP BJT
Trans GP BJT PNP 120V 8A 80000mW 3-Pin(3+Tab) TO-3P Tube
Compliant with Exemption | |
EAR99 | |
Obsolete | |
8541.29.00.95 | |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 15.1 |
Package Width | 5(Max) |
Package Length | 15.8(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-3P |
3 | |
Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this PNP 2STA1694 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.