| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| Package Width | 4.19(Max) |
| Package Length | 5.2(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-92 |
| 3 | |
| Lead Shape | Through Hole |
Increase the current gain in your circuit by using ON Semiconductor's NPN BC517ZL1G Darlington transistor. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 30000@20mA@2 V. It has a maximum collector emitter saturation voltage of 1@0.1mA@100mA V. This Darlington transistor array's maximum emitter base voltage is 10 V. Its maximum power dissipation is 1500 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |