onsemiSMUN5111DW1T1GデジタルBJT - プリバイアス
Trans Digital BJT PNP 50V 0.1A 385mW 6-Pin SC-88 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Dual | |
| 50 | |
| 100 | |
| 35@5mA@10V | |
| 10 | |
| 0.25@0.3mA@10mA | |
| 1 | |
| 385 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SC-88 |
| 6 |
Look no further than ON Semiconductor's PNP SMUN5111DW1T1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |