Toshiba Digital BJT
| 부품 번호 | Price | 주식 | Manufacturer | Category | Type | Configuration | Process Technology | Maximum Collector-Emitter Voltage - (V) | Maximum Continuous DC Collector Current - (mA) | Minimum DC Current Gain | Typical Input Resistor - (kOhm) | Typical Resistor Ratio | Maximum Power Dissipation - (mW) | Maximum Collector-Emitter Saturation Voltage - (V) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
RN2502(TE85L,F)
Trans Digital BJT PNP 50V 0.1mA 300mW 5-Pin SMV T/R
|
주식
4,257
$0.0897 에서 $0.164로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | PNP | Dual Common Emitter | 50 | 100 | 50@10mA@5V | 10 | 1 | 300 | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||
| RN2102MFV,L3F(CT Silicon PNP Epitaxial PCT Process Bias Resistor built-in Transistor |
주식
4,550
$0.0214 에서 $0.0768로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | EAR99 | No | ||||||||||||||||||||
| RN1101MFV,L3F(CT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
주식
13,801
$0.0214 에서 $0.0768로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | |||||||||||||||||||||
| RN1105MFV,L3FCT Transistor Silicon NPN Epitaxial PCT Process Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
주식
3,056
$0.0227 에서 $0.0855로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | |||||||||||||||||||||
| RN2106MFV,L3F(CT Silicon PNP Epitaxial PCT Process Bias Resistor built-in Transistor |
주식
7,900
$0.0234 에서 $0.0525로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | |||||||||||||||||||||
RN1706,LF(T
Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
|
주식
3,000
$0.0595 에서 $0.0728로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 5 | USV | No | No | No | No | No | No | |||||||||||||||||
RN1114MFV,L3F(T
Trans Digital BJT NPN 50V 0.1mA 150mW 3-Pin VESM T/R
|
주식
7,600
$0.0234 에서 $0.0525로 변경
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | No | No | No | EAR99 | No | ||||||||||||||||
RN2101,LF(CT
Trans Digital BJT PNP 50V 0.1mA 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
주식
312
$0.0172
단위 당
|
Toshiba | Digital BJT - Pre-Biased | 100 | Tape and Reel | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||
| RN2103,LF(CT Trans Digital BJT PNP 50V 0.1mA 100mW 3-Pin SSM T/R Automotive AEC-Q101 |
|
Toshiba | Digital BJT - Pre-Biased | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||
| RN1117(TE85L,F) Trans Digital BJT NPN 50V 0.1mA 100mW 3-Pin SSM T/R |
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Toshiba | Digital BJT - Pre-Biased | 3 | SSM | SSM | No | No | No | No | No | EAR99 | No | |||||||||||||||
|
RN1705,LF(T
Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
|
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Toshiba | Digital BJT - Pre-Biased | 5 | USV | No | No | No | No | No | No | |||||||||||||||||
| RN2301,LF(T Trans Digital BJT PNP 50V 0.1mA 100mW 3-Pin USM T/R Automotive AEC-Q101 |
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Toshiba | Digital BJT - Pre-Biased | 3 | USM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||
| RN2107MFV,L3F(CT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | ||||||||||||||||||||||
|
RN1108MFV,L3F
Trans Digital BJT NPN 50V 0.1mA 150mW 3-Pin VESM T/R
|
|
Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | No | No | EAR99 | No | |||||||||||||||||
|
RN2110MFV,L3F
Trans Digital BJT PNP 50V 0.1mA 150mW 3-Pin VESM T/R
|
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Toshiba | Digital BJT - Pre-Biased | 3 | VESM | No | No | No | No | EAR99 | No | |||||||||||||||||
RN1311(TE85L,F)
Trans Digital BJT NPN 50V 0.1mA 100mW 3-Pin USM T/R
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Toshiba | Digital BJT - Pre-Biased | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||
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RN1317(TE85L,F)
Trans Digital BJT NPN 50V 0.1mA 100mW 3-Pin USM T/R
|
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Toshiba | Digital BJT - Pre-Biased | 3 | USM | No | No | No | No | No | EAR99 | No | ||||||||||||||||
RN2414(TE85L,F)
Trans Digital BJT PNP 50V 0.1mA 200mW 3-Pin S-Mini T/R
|
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Toshiba | Digital BJT - Pre-Biased | 3 | S-Mini | S-MINI | No | Unknown | No | No | No | No | EAR99 | No | ||||||||||||||
|
RN1307,LXGF(T
Trans Digital BJT NPN 50V 100mA 3-Pin USM Automotive AEC-Q101
|
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Toshiba | Digital BJT - Pre-Biased | 3 | USM | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||||
RN1902,LXGF(CT
Silicon NPN Epitaxial Type Automotive AEC-Q101
|
|
Toshiba | Digital BJT - Pre-Biased | 6 | US | US | No | No | Yes | AEC-Q101 | Yes | Unknown | No | |||||||||||||||
| TDTC143Z,LM Silicon NPN Epitaxial Digital Transistor |
$0.0333 에서 $0.0337로 변경
단위 당
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Toshiba | Digital BJT - Pre-Biased | 3 | SOT-23 | SOT | No | No | No | No | No | |||||||||||||||||
|
RN1405,LF
Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin S-Mini T/R
|
|
Toshiba | Digital BJT - Pre-Biased | 3 | S-Mini | S-MINI | No | No | No | No | EAR99 | No | ||||||||||||||||
|
RN1905,LF(CT
Trans Digital BJT NPN 50V 0.1mA 200mW 6-Pin US T/R Automotive AEC-Q101
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Toshiba | Digital BJT - Pre-Biased | 6 | US | US | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||||||||
|
RN2104,LF(CT
Trans Digital BJT PNP 50V 0.1mA 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
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Toshiba | Digital BJT - Pre-Biased | 3 | SSM | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | |||||||||||||||
|
RN2705,LF
Trans Digital BJT PNP 50V 0.1mA 200mW 5-Pin USV T/R
|
|
Toshiba | Digital BJT - Pre-Biased | 5 | USV | No | No | No | No | EAR99 | No |