Toshiba RF BJT
| 부품 번호 | Price | 주식 | Manufacturer | Category | Type | Material | Configuration | Number of Elements per Chip | Maximum Collector Base Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Maximum Emitter Base Voltage - (V) | Maximum DC Collector Current - (A) | Operational Bias Conditions | Minimum DC Current Gain | Minimum DC Current Gain Range | Typical Output Capacitance - (pF) | Maximum Power Dissipation - (mW) | Typical Power Gain - (dB) | Maximum 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MT3S111TU,LF(B VHF-UHF Low-Noise, Low-Distortion Amplifier Application |
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Toshiba | RF BJT | 3 | UFM | EAR99 |