Compliant | |
EAR99 | |
LTB | |
8541.21.00.75 | |
SVHC | Yes |
Automotive | No |
PPAP | No |
NPN | |
SiGe | |
Single | |
1 | |
10 | |
3 | |
<20 | |
1.3 | |
0.03 | |
0.001 to 0.06 | |
100 | |
205@2mA@2V | |
200 to 300 | |
0.31 | |
0.084 | |
160 | |
11.7(Typ) | |
24.5 | |
25.5(Typ) | |
53000(Typ) | |
0.75(Typ) | |
-65 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 0.33(Max) mm |
Package Width | 1 mm |
Package Length | 0.6 mm |
PCB changed | 3 |
Supplier Package | DFN_C |
3 | |
Lead Shape | No Lead |
Compared to other transistors, the BFU730LXZ RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.