NXP SemiconductorsBFU730LXZ無線周波数BJT
Trans RF BJT NPN 3V 0.03A 160mW 3-Pin DFN_C T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.33(Max) |
| Package Width | 1 |
| Package Length | 0.6 |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | DFN_C |
| 3 | |
| Lead Shape | No Lead |
Compared to other transistors, the BFU730LXZ RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |