onsemiNSS60600MZ4T1GGP BJT

Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R

Compared to other transistors, the PNP NSS60600MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

9 부품 : 오늘 배송

    Total$0.17Price for 1

    • Service Fee  $7.00

      오늘 배송

      Ships from:
      미국
      Date Code:
      2307+
      Manufacturer Lead Time:
      10 주
      Minimum Of :
      1
      Maximum Of:
      9
      Country Of origin:
      말레이시아
         
      • Price: $0.1749
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • 오늘 배송

      Ships from:
      미국
      Date Code:
      2307+
      Manufacturer Lead Time:
      10 주
      Country Of origin:
      말레이시아
      • In Stock: 9 부품
      • Price: $0.1749