onsemiNSS60600MZ4T1G通用双极型晶体管
Trans GP BJT PNP 60V 6A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 60 | |
| 6 | |
| 1@0.1A@1A | |
| -55 to 150 | |
| 0.05@2mA@0.1A|0.07@0.1A@1A|0.12@0.2A@2A|0.25@60mA@3A|0.35@0.6A@6A | |
| 6 | |
| 100 | |
| 150@500mA@2V|120@1A@2V|100@2A@2V|70@6A@2V | |
| 2000 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.57 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
Compared to other transistors, the PNP NSS60600MZ4T1G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |