In systems requiring step-down conversion from a high voltage of 24 V to 48 V bus at high power, a 60 V controller paired with discrete 80 V MOSFETs are typically used, especially when power levels exceed the 20 W range. This is mainly because even the best BCD processes cannot offer high performance MOSFETs in the 60 V to 80 V range.
Vishay’s SiC46x family of products brushes aside this limitation by integrating a controller, designed on a BCD process, with 72 V absolute maximum rated high side and low side trench MOSFETs. Trench MOSFETs with a 60 V to 80 V drain to source rating offer up to five times better figure of merit (FOM) compared BCD processes of a similar die size and voltage rating. Package design is also optimized to improve thermal performance.
Watch this video to learn about the high output power capability of Vishay’s SIC46X family of products.
You can also download the microBUCK / microBRICK flyer or read their "Did You Know?" article.
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