The HMC8412 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 0.4 GHz to 11 GHz.
The HMC8412 provides a typical gain of 15.5 dB, a 1.4 dB typical noise figure, and a typical output third-order intercept (OIP3) of ≤33 dBm, requiring only 60 mA from a 5 V drain supply voltage. The saturated output power (PSAT) of ≤20.5 dBm typical enables the low noise amplifier (LNA) to function as a local oscillator (LO) driver for many Analog Devices, Inc., balanced, inphase and quadrature (I/Q) or image rejection mixers.
The HMC8412 also features inputs and outputs that are internally matched to 50 Ω, making the device ideal for surface-mount technology (SMT)-based, high capacity microwave radio applications. The HMC8412 is housed in an RoHS-compliant, 2 mm × 2 mm, 6-lead LFCSP.
Low Noise Wideband Amplifier offers significant space savings
- • 0.4 GHz to 11 GHz operation for robust instrumentation and communications
- • Improves overall system noise and linearity
- • Compact 2 x 2 mm package
Key Features and Benefits
- • Improves overall system noise with a Noise Figure = 1.4 dB
- • Improves overall system linearity with an IP3 = 33 dBm
- • Small footprint, saving overall board space, Package size 2x2 mm. Previous Generation was 5x5 mm
Applications
- • Aerospace/Defense: Electronic Warfare
- • Instrumentation: Wideband test
- • General Purpose
Block Diagrams and Tables
Related Evaluation Board