Infineon Technologies AG FET Transistors
| 부품 번호 | Price | 주식 | Manufacturer | Category | Material | Channel Type | Configuration | Channel Mode | Number of Elements per Chip | Maximum Gate Source Voltage - (V) | Mode of Operation | Maximum Drain Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Typical Input Capacitance @ Vds - (pF) | Maximum Power Dissipation - (mW) | Output Power - (W) | Typical Power Gain - (dB) | Minimum Frequency - (MHz) | Maximum Frequency - (MHz) | Maximum Drain Source Resistance - (Ohm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BF 2040W H6814
Trans RF FET N-CH 8V 0.04A Automotive 4-Pin(3+Tab) SOT-343 T/R
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주식
45
$0.0366
단위 당
|
Infineon Technologies AG | RF FETs | Si | N | Single Dual Gate | Depletion | 1 | 6 | 8 | 0.04 | 2.9@5V@Gate 1 | 200 | 23 | 1000 | Tape and Reel | 4 | SOT-343 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No | |||||||
IGLD60R190D1AUMA3
Trans JFET N-CH 600V 10A GaN 8-Pin LSON EP T/R
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주식
2,642
$3.039 에서 $3.176로 변경
단위 당
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Infineon Technologies AG | JFETs | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
IGO60R070D1AUMA2
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
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주식
199
$7.476 에서 $8.009로 변경
단위 당
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Infineon Technologies AG | JFETs | GaN | N | Single Hex Drain Seven Source Dual Gate | -10(Min) | 600 | 31000 | 125000 | Tape and Reel | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
IGT60R070D1ATMA4
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
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$6.528
단위 당
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Infineon Technologies AG | JFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
IGLR60R190D1XUMA1
Trans JFET N-CH 600V 12.8A GaN 8-Pin TSON EP T/R
|
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Infineon Technologies AG | JFETs | 8 | TSON EP | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
IGOT60R070D1AUMA3
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
|
주식
283
$7.476 에서 $9.06로 변경
단위 당
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Infineon Technologies AG | JFETs | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
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IGLD60R070D1AUMA3
Trans JFET N-CH 600V 15A GaN 8-Pin LSON EP T/R
|
주식
74
$6.848 에서 $7.688로 변경
단위 당
|
Infineon Technologies AG | JFETs | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
IGLD60R070D1AUMA1
Trans JFET N-CH 600V 15A GaN 8-Pin LSON EP T/R
|
주식
3,009
$22.1656
단위 당
|
Infineon Technologies AG | JFETs | GaN | N | Single Quad Drain Dual Source | -10(Min) | 600 | 15000 | 114000 | Tape and Reel | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
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IGOT60R070D1AUMA1
Trans JFET N-CH 600V 31A GaN 20-Pin DSO EP T/R
|
주식
302
$10.40 에서 $13.60로 변경
단위 당
|
Infineon Technologies AG | JFETs | GaN | N | Single Hex Drain Seven Source | -10(Min) | 600 | 31000 | 125000 | Tape and Reel | 20 | DSO EP | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
IGT60R190D1SATMA1
Trans JFET N-CH 600V 12.5A GaN 9-Pin(8+Tab) HSOF T/R
|
주식
1
$2.269
단위 당
|
Infineon Technologies AG | JFETs | GaN | N | Single Hex Source | -10(Min) | 600 | 12500 | 55500 | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
|
IGT60R070D1
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
|
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Infineon Technologies AG | JFETs | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
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IGOT60R042D1AUMA2
Trans JFET N-CH 600V 19A GaN 20-Pin DSO EP T/R
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Infineon Technologies AG | JFETs | 20 | DSO EP | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGLR60R260D1XUMA1
Trans JFET N-CH 600V 10.4A GaN 8-Pin TSON EP T/R
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Infineon Technologies AG | JFETs | 8 | TSON EP | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
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IGLR60R340D1XUMA1
Trans JFET N-CH 600V 8.2A GaN 8-Pin TSON EP T/R
|
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Infineon Technologies AG | JFETs | 8 | TSON EP | SON | No | No | No | No | EAR99 | No | |||||||||||||||||||||||
IGLD60R190D1SAUMA1
Trans JFET N-CH 600V 10A GaN 8-Pin LSON EP T/R
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$3.772 에서 $4.189로 변경
단위 당
|
Infineon Technologies AG | JFETs | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||
|
IGO60R042D1AUMA2
Trans JFET N-CH 600V 19A GaN 20-Pin DSO EP T/R
|
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Infineon Technologies AG | JFETs | 20 | DSO EP | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||
IGLD60R190D1AUMA1
Trans JFET N-CH 600V 10A GaN 8-Pin LSON EP T/R
|
$3.772 에서 $4.189로 변경
단위 당
|
Infineon Technologies AG | JFETs | GaN | N | Single Quad Drain Triple Source | -10(Min) | 600 | 10000 | 62500 | 0.19 | Tape and Reel | 8 | LSON EP | SON | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||
|
IGT60R070D1ATMA1
Trans JFET N-CH 600V 31A GaN 9-Pin(8+Tab) HSOF T/R
|
주식
20,000
|
Infineon Technologies AG | JFETs | GaN | N | Single Hex Source | -10(Min) | 600 | 31000 | 125000 | Tape and Reel | 9 | HSOF | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||
| PTFA220041MV4XUMA1 Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R |
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Infineon Technologies AG | RF FETs | N | Single | Enhancement | 1 | 12 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 4 | 19 | 700 | 2200 | 2010(Typ)@10V | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | 5A991 | No | ||||||||
| PTFA220121MV4XUMA1 Trans RF MOSFET N-CH 65V 10-Pin SON EP T/R |
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Infineon Technologies AG | RF FETs | N | Single | Enhancement | 1 | 12 | 2-Carrier W-CDMA|2-Tone|CW | 65 | 12 | 20.5 | 700 | 2200 | 2010(Typ)@10V | LDMOS | Tape and Reel | 10 | SON EP | SON | No | No | No | No | No | EAR99 | No | ||||||||
PTVA104501EHV1R0XTMA1
Trans RF MOSFET N-CH 105V 3-Pin Case 33288 T/R
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Infineon Technologies AG | RF FETs | N | Single | Enhancement | 1 | 12 | Pulsed RF | 105 | 450 | 17.5 | 960 | 1215 | 100(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 33288 | No | No | No | No | EAR99 | No | ||||||||||
| PTVA120251EAV1R250XTMA1 Trans RF MOSFET N-CH 105V 3-Pin Case 36265 T/R |
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Infineon Technologies AG | RF FETs | N | Single | Enhancement | 1 | 12 | Pulsed RF | 105 | 25 | 17 | 1200 | 1400 | 1400(Typ)@10V | LDMOS | Tape and Reel | 3 | Case 36265 | No | No | No | No | No | EAR99 | No | |||||||||
| PXFC193808SVV1R250XTMA1 Trans RF MOSFET N-CH 65V 7-Pin Case H-37275G-6/2 T/R |
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Infineon Technologies AG | RF FETs | N | Dual Common Source | Enhancement | 2 | 10 | 1-Carrier W-CDMA | 65 | 380 | 21 | 1805 | 1880 | 190(Typ)@10V | LDMOS | Tape and Reel | 7 | Case H-37275G-6/2 | No | No | No | No | EAR99 | No | ||||||||||
PXFC192207SHV1R250XTMA1
Trans RF MOSFET N-CH 65V 5-Pin Case H-37288G-4/2 T/R
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Infineon Technologies AG | RF FETs | N | Single | Enhancement | 1 | 10 | 2-Carrier W-CDMA | 65 | 50 | 20 | 1805 | 1990 | 30(Typ)@10V | LDMOS | Tape and Reel | 5 | Case H-37288G-4/2 | No | No | No | No | No | 5A991b. | No | |||||||||
BF2040E6814HTSA1
Trans RF MOSFET N-CH 8V 0.04A Automotive AEC-Q101 4-Pin SOT-143 T/R
|
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Infineon Technologies AG | RF FETs | Si | N | Single Dual Gate | Depletion | 1 | 6 | 8 | 0.04 | 2.9@5V@Gate 1 | 200 | 23 | 1000 | Tape and Reel | 4 | SOT-143 | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | No |