BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6GHz Low Noise Amplifier
Infineon Technologies AG이 부품 BFP740F 을 사용하는 참조 설계
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최종 제품의 경우
- Cordless Phone
- Wireless LAN
Description
- BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6GHz Low Noise Amplifier. The new Silicon-Germanium BFP740F in TSFP-4 package is demonstrated as a 5 - 6 GHz Low Noise Amplifier. A 3-layer PCB was employed, the PCB material being low-cost, high-loss industry standard FR4 epoxy material. Standard low-cost 0402 case size chip components were used throughout
최종 제품의 경우
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Operating Frequency5000 to 6000 MHz
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Output Power26.2 dBm
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Gain15.7 dB
피쳐링 부품 (2)
부품 번호 | Manufacturer | Type | Description | |||
---|---|---|---|---|---|---|
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BFP740FH6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R | 구매 | |
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BFP 740F H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW 4-Pin TSFP T/R Automotive AEC-Q101 | 구매 |