BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6GHz Low Noise Amplifier
使用 Infineon Technologies AG 的 BFP740F 的参考设计
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依据最终产品
- Cordless Phone
- Wireless LAN
说明
- BFP740F Ultra-Low Noise Silicon-Germanium Transistor as 5 - 6GHz Low Noise Amplifier. The new Silicon-Germanium BFP740F in TSFP-4 package is demonstrated as a 5 - 6 GHz Low Noise Amplifier. A 3-layer PCB was employed, the PCB material being low-cost, high-loss industry standard FR4 epoxy material. Standard low-cost 0402 case size chip components were used throughout
主要特色
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Operating Frequency5000 to 6000 MHz
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Output Power26.2 dBm
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Gain15.7 dB
Featured Parts (1)
零件编号 | 供应商 | 类别 | 说明 | |||
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BFP 740F H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4V 0.045A 160mW 4-Pin TSFP T/R Automotive AEC-Q101 | 买入 |