BFP740F SiGe:C Ultra Low Noise RF Transistor In 2.4 - 2.5GHz LNA Application

使用 Infineon Technologies AG 的 BFP740F 的参考设计

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供应商

Infineon Technologies AG
  • 应用类别
    无线通信
  • 产品类别
    射频放大器

依据最终产品

  • PoE Wireless Access Point
  • Wireless LAN

说明

  • BFP740F SiGe:C Ultra Low Noise RF Transistor In 2.4 - 2.5GHz LNA Application. The BFP740F is a high gain, ultra low noise Silicon-Germanium-Carbon (SiGe:C) HBT device suitable for a wide range of Low Noise Amplifier (LNA) applications

主要特色

  • Operating Frequency
    2400 to 2500 MHz
  • Output Power
    14.2 dBm
  • Gain
    17.5 dB

Featured Parts (2)

Featured Parts
零件编号 供应商 类别 说明
BFP 740F H6327 Infineon Technologies AG RF BJT Trans RF BJT NPN 4V 0.045A 160mW 4-Pin TSFP T/R Automotive AEC-Q101 买入
BFP740FH6327XTSA1 Infineon Technologies AG RF BJT Trans RF BJT NPN 4V 0.045A 160mW Automotive AEC-Q101 4-Pin TSFP T/R 买入

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