BFP640F Low-Noise Silicon-Germanium Transistor as 5 - 6GHz Single-Stage Low Noise Amplifier
使用 Infineon Technologies AG 的 BFP640F 的参考设计
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依据最终产品
- Cordless Phone
- Wireless LAN
说明
- BFP640F Low-Noise Silicon-Germanium Transistor as 5 - 6GHz Single-Stage Low Noise Amplifier (LNA), with reduced external component count and reduced gain at 2.4 GHz
主要特色
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Operating Frequency5000 to 6000 MHz
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Output Power19.4 dBm
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Gain11 dB
Featured Parts (2)
零件编号 | 供应商 | 类别 | 说明 | |||
---|---|---|---|---|---|---|
|
BFP640FH6327XTSA1 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin TSFP T/R | 买入 | |
|
BFP 640F H6327 | Infineon Technologies AG | RF BJT | Trans RF BJT NPN 4.1V 0.05A 200mW Automotive AEC-Q101 4-Pin TSFP T/R | 买入 |